A CMOS op amp capable of operating from 1.5 V power supply is shown. All device lengths are $1 \mu \mathrm{~m}$ and are to operate in the saturation region. Design all of the W values of every transistor of this op amp to meet the following specifications.

\begin{tabular}{|l|l|l|}
\hline Slew rate $= \pm 10 \mathrm{~V} / \mu \mathrm{s}$ & $\mathrm{V}_{\text {out }}(\max )=1.25 \mathrm{~V}$ & $\mathrm{~V}_{\text {out }}(\min )=0.75 \mathrm{~V}$ \\
\hline $\mathrm{~V}_{\mathrm{ic}}(\min )=1 \mathrm{~V}$ & $\mathrm{~V}_{\mathrm{ic}}(\max )=2 \mathrm{~V}$ & $\mathrm{~GB}=10 \mathrm{MHz}$ \\
\hline \multicolumn{3}{|l|}{\begin{tabular}{l} 
Phase margin $=60^{\circ}$ when the output pole $=2 \mathrm{~GB}$ and the RHP zero $=10 \mathrm{~GB}$. \\
Keep the mirror pole $\geq 10 \mathrm{~GB}\left(\mathrm{C}_{\mathrm{ox}}=0.5 \mathrm{fF} / \mu \mathrm{m}^2\right)$.
\end{tabular}} \\
\hline
\end{tabular}

Your design should meet or exceed these specifications. Ignore bulk effects in this problem and summarize your W values to the nearest micron, the value of $C_c(\mathrm{pF})$, and $I(\mu \mathrm{~A})$ in the following table. Use the following model parameters: $K_N{ }^{\prime}=24 \mu \mathrm{~A} / \mathrm{V}^2, K_P{ }^{\prime}= 8 \mu \mathrm{~A} / \mathrm{V}^2, V_{T N}=-V_{T P}=0.75 \mathrm{~V}, \lambda_N=0.01 \mathrm{~V}^{-1}$ and $\lambda_P=0.02 \mathrm{~V}^{-1}$.